Spin-Polarized Electron Transport in GaAs: Role of Holes

Brian A. Ruzicka; Lalani K. Werake; Hui Zhao; Matt Mover; G. Vignale

doi:10.1364/CLEO.2009.JWA117

Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
OSA Technical Digest (CD) (Optica Publishing Group, 2009),
paper JWA117
•https://doi.org/10.1364/CLEO.2009.JWA117

Spin-Polarized Electron Transport in GaAs: Role of Holes

Brian A. Ruzicka, Lalani K. Werake, Hui Zhao, Matt Mover, and G. Vignale

Conference on Lasers and Electro-Optics 2009

Baltimore, Maryland United States
31 May–5 June 2009
ISBN: 978-1-55752-869-8

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Joint CLEO Poster Session II (JWA)

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B. A. Ruzicka, L. K. Werake, H. Zhao, M. Mover, and G. Vignale, "Spin-Polarized Electron Transport in GaAs: Role of Holes," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optica Publishing Group, 2009), paper JWA117.

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Abstract

Spin-polarized electron transport in GaAs is studied with emphasis on the role of holes. Sub-picosecond ac spin current pulses are produced and ambipolar spin diffusion are studied, both dominated by space charge field of holes.

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