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InGaAs QW Nanopillar Light Emitting Diodes Monolithically Grown on a Si Substrate

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Abstract

Room-temperature operation of InGaAs/GaAs QW nanopillar light emitting diodes grown on a (111) Si substrate by low temperature MOCVD (400°C) and fabricated using conventional lithography and processing techniques are reported for the first time.

© 2010 Optical Society of America

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