Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Study of Polarization Properties of Light Emitted from Tensile Strained InGaN/AlInN Quantum Well

Not Accessible

Your library or personal account may give you access

Abstract

This paper discusses the optical polarization anisotropic of a c-plane InGaN/AlInN quantum well under the tensile strain. The calculation results indicate that with particular In composition of AlInN alloy for the tensile strain, it is possible to reduce the quantum-confined Stark effect and make an out-planed polarized light source for edge emitting laser diodes or light emitting diodes.

© 2010 Optical Society of America

PDF Article
More Like This
Study of Light Emission Polarization Properties of Semipolar InGaN/GaN Quantum Well Under Different Strain Conditions

Shu-Ting Yeh and Yuh-Renn Wu
TuPH_8 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2013

Light Emission Polarization Properties of a-plane InGaN/GaN Quantum Wells Light Emitting Diodes

Hung-Hsun Huang and Yuh-Renn Wu
CMM2 Conference on Lasers and Electro-Optics (CLEO:S&I) 2009

Growths of InGaN-Based Light-Emitting Diodes with AlInN Thin Barrier for Efficiency Droop Suppression

Guangyu Liu, Hongping Zhao, Jing Zhang, and Nelson Tansu
CMEE6 CLEO: Science and Innovations (CLEO:S&I) 2011

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved