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Characterization of SOI Microrings Using IR Imaging

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Abstract

We demonstrate a non-invasive diagnostic method of quantitative infrared (IR) imaging, applied here to a series cascade of microring resonators fabricated in silicon-on-insulator. The IR images contain information on the otherwise inaccessible individual through-ports and the resonators themselves, providing coupling, loss and intensity-enhancement parameters for the individual rings.

© 2010 Optical Society of America

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