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Si-Ge Surface-Normal Asymmetric Fabry-Perot Electroabsorption Modulator

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Abstract

The strong electroabsorption modulation possible using the quantum-confined Stark effect in Ge/SiGe quantum wells provides the working mechanism for efficient, CMOS-compatible photonic integrated modulators. We describe such a device employing a surface-normal asymmetric Fabry-Perot design.

© 2010 Optical Society of America

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