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Conferences > CLEO > 2010 > CTuE > CTuE3

3.2 μm Single Spatial Mode Diode Lasers Operating at Room Temperature

A. Soibel, C. Frez, A. Ksendzov, Y. Qiu, S. Forouhar, J. Chen, T. Hosoda, G. Kipshidze, L. Shterengas, G. Tsvid, and G. Belenky

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Abstract

Ridge waveguide type-I quantum-well GaSb-based diode lasers, with active regions utilizing InGaAsSb/AlInGaAsSb quantum wells, have been demonstrated to operate at temperatures as high as 40 °C with 1 mW of power at wavelengths above 3.2μm.

© 2010 Optical Society of America

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