Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO > 2010 > CWB > CWB2

Ultrahigh-Q Silicon-on-Insulator One Dimensional Mode-Gap Nanocavity

Eiichi Kuramochi, Takasumi Tanabe, Hideaki Taniyama, Kohei Kawasaki, and Masaya Notomi

Not Accessible

Your library or personal account may give you access

Abstract

We reveal that a Si-wire-compatible SOI one-dimensional photonic crystal nanocavity can have a numerical Q as high as 108 with a modal volume of less than 1 (λ/n)3. An experimental Q of 360,000 is observed.

© 2010 Optical Society of America

PDF Article
More Like This
A Photolithographic High-Q Photonic Crystal Nanocavity Fabricated on a Silicon-on-insulator Structure

Yuta Ooka, Tomohiro Tetsumoto, Akihiro Fushimi, Wataru Yoshiki, and Takasumi Tanabe
CK_9_2 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2015

Ultrahigh-Q/V single point-defect photonic crystal nanocavity with embedded sub-wavelength air-slot

Eiichi Kuramochi, Jun-Ki Kim, Hideaki Taniyama, Akihiko Shinya, Shota Kita, and Masaya Notomi
JTh3M.5 CLEO: Applications and Technology (CLEO:A&T) 2017

Ultrahigh-Q/V single cell slotted nanocavity operated in water

Eiichi Kuramochi, Théo Martel, Shota Kita, Hideaki Taniyama, Akihiko Shinya, and Masaya Notomi
SM2J.6 CLEO: Science and Innovations (CLEO:S&I) 2019

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use