GaSb-Based Semiconductor Disk Lasers For The 2 - 3 μm Wavelength Range: Versatile Lasers For High-Power And Narrow Linewidth Emission

M. Rattunde; B. Rösener; S. Kaspar; R. Moser; C. Manz; K. Köhler; J. Wagner

doi:10.1364/CLEO.2010.CWE3

Conference on Lasers and Electro-Optics 2010
OSA Technical Digest (CD) (Optica Publishing Group, 2010),
paper CWE3
•https://doi.org/10.1364/CLEO.2010.CWE3

GaSb-Based Semiconductor Disk Lasers For The 2 - 3 μm Wavelength Range: Versatile Lasers For High-Power And Narrow Linewidth Emission

M. Rattunde, B. Rösener, S. Kaspar, R. Moser, C. Manz, K. Köhler, and J. Wagner

Conference on Lasers and Electro-Optics 2010

San Jose, California United States
16–21 May 2010
ISBN: 978-1-55752-889-6

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High Power Lasers (CWE)

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M. Rattunde, B. Rösener, S. Kaspar, R. Moser, C. Manz, K. Köhler, and J. Wagner, "GaSb-Based Semiconductor Disk Lasers For The 2 - 3 μm Wavelength Range: Versatile Lasers For High-Power And Narrow Linewidth Emission," in Conference on Lasers and Electro-Optics 2010, OSA Technical Digest (CD) (Optica Publishing Group, 2010), paper CWE3.

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Abstract

Highly efficient GaSb-based semiconductor-disk-lasers in the 1.9-2.8μm range have been fabricated. They reach output powers >3W in CW-operation at room temperature. By using intracavity filters, single-frequency emission with a linewidth below 2.3MHz was achieved.

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