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Thin-Film Lasers Embedded in Passively Aligned SU-8 Waveguides on SiO2/Si

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Abstract

A thin film GaAs based edge emitting laser is bonded to silicon, with one facet embedded in a passively aligned polymer waveguide. Jth = 260 A/cm2 at λ=1002.5 nm is achieved for this integrated system.

© 2010 Optical Society of America

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