High Performance Visible Semiconductor Lasers Operating at 630 nm

B.C. Qiu; O. P. Kowalski; S. D. McDougall; B. Schmidt; J. H. Marsh; J. H. Marsh

doi:10.1364/CLEO.2010.JTuD103

Conference on Lasers and Electro-Optics 2010
OSA Technical Digest (CD) (Optica Publishing Group, 2010),
paper JTuD103
•https://doi.org/10.1364/CLEO.2010.JTuD103

High Performance Visible Semiconductor Lasers Operating at 630 nm

B.C. Qiu, O. P. Kowalski, S. D. McDougall, B. Schmidt, and J. H. Marsh

Conference on Lasers and Electro-Optics 2010

San Jose, California United States
16–21 May 2010
ISBN: 978-1-55752-889-6

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Joint CLEO/QELS Poster Session I (JTuD)

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B. C. Qiu, O. P. Kowalski, S. D. McDougall, B. Schmidt, and J. H. Marsh, "High Performance Visible Semiconductor Lasers Operating at 630 nm," in Conference on Lasers and Electro-Optics 2010, OSA Technical Digest (CD) (Optica Publishing Group, 2010), paper JTuD103.

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Abstract

630 nm single mode lasers with a V-profile layer incorporated within the waveguide core exhibit reduced fast axis divergence (19° FWHM) while maintaining a low threshold current (30 mA), making them ideal for display applications.

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