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Conferences > CLEO > 2010 > JTuD > JTuD24

Characterization of a-plane green light-emitting diodes using nanorod lateral overgrowth

Shih-Chun Ling, Shih-Pang Chang, Tien-Chang Lu, Hao-Chung Kuo, and Shing-Chung Wang

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Abstract

We have demonstrated nanorod lateral overgrowth to reduce dislocation density in a-plane GaN. Subsequently, we grow green a-plane light-emitting diodes using nanorod lateral overgrowth. Output power of 0.5 mW was measured at 20 mA.

© 2010 Optical Society of America

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