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Conferences > CLEO > 2010 > JTuD > JTuD28

Enhanced Surface Plasmon Coupling Effect with a Metal/SiO2/GaN Structure for Further Improving the Emission Efficiency of a Light-emitting Diode

Kun-Ching Shen, Cheng-Yen Chen, Yen-Cheng Lu, Che-Hao Liao, Chih-Yen Chen, Chieh Hsieh, and C. C. Yang

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Abstract

Further enhancement of the efficiency of an InGaN/GaN quantum well (QW) light-emitting diode (LED) through QW coupling with surface plasmons generated on Ag nano-gratings by inserting a SiO2 layer between semiconductor and metal is demonstrated.

© 2010 Optical Society of America

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