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Optica Publishing Group
  • The Pacific Rim Conference on Lasers and Electro-Optics
  • Technical Digest Series (Optica Publishing Group, 1995),
  • paper FO4

Spectral and polarization characteristics of (GaAl)As SQW superluminescent diodes emission

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Abstract

Superluminescent diodes (SLDs) in whose characteristics the valuable features of laser diode (LD) and light-emitting diode (LED) are combined are the preferable light sources for several types of optical sensors and communication systems. For some applications (white light interferometry, optical low coherence reflectometry) the main requirement to the light source is a short coherence length Lc that is inversely proportional to spectral linewidth. Soon after the creation of quantum well (QW) LD based on (AlGa)As heterostructure (λ = 800-900 nm) it was shown that its optical gain bandwidth can exceed 100 nm.1 Recently several papers devoted to the development of wide spectrum QW SLDs were published. At λ = 800 nm using SQW (AlGa)As SLD2 the spectral linewidth of 68 nm (Lc = 9.2 µm) was obtained. These values exceed significantly those of conventional bulk SLD, but spectral behavior of SQW SLD is more complicated due to its active layer band structure peculiarities. Another important parameter especially for the interferometric applications is polarization degree of output radiation.

© 1995 IEEE

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