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  • The 4th Pacific Rim Conference on Lasers and Electro-Optics
  • Technical Digest Series (Optica Publishing Group, 2001),
  • paper MC3_4

Broadened gain bandwidth in diode-pumped Yb-doped materials at low temperature

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Abstract

Each gain band width of diode-pumped Yb:glass and Yb:YLF was dramatically broadened to 50 nm at 8K from 20 nm at room temperature and to 35 nm from 20 nm, respectively.

© 2001 IEEE

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