Picosecond pulse generation by gain switched 650 nm InGaAlP Fabry Perot laser diode

Kwang H. Oh; U. -C. Paek; Dug Y. Kim

The 4th Pacific Rim Conference on Lasers and Electro-Optics
Technical Digest Series (Optica Publishing Group, 2001),
paper P1_69

Picosecond pulse generation by gain switched 650 nm InGaAlP Fabry Perot laser diode

Kwang H. Oh, U. -C. Paek, and Dug Y. Kim

Conference on Lasers and Electro-Optics/Pacific Rim 2001

Chiba Japan
15–19 July 2001
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Poster Session 1 [Room E] (P1)

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K. H. Oh, U. -. Paek, and D. Y. Kim, "Picosecond pulse generation by gain switched 650 nm InGaAlP Fabry Perot laser diode," in The 4th Pacific Rim Conference on Lasers and Electro-Optics, Technical Digest Series (Optica Publishing Group, 2001), paper P1_69.

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Abstract

We have investigated in time domain and wavelength domain various characteristics of a gain switched 650 nm InGaAlP Fabry Perot laser diode for ultra fast optical transmission systems. Optimum gain switching conditions are studied in detail with this laser diode.

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