Abstract
Novel strain evaluation method is proposed, which is based on the strain dependence of the excitonic transition energy. Comparing the excitonic transition energies measured by the photocurrent spectroscopy with the calculated energies c-axis strain in undoped GaN grown on SiC substrate was estimated to be -0.03%.
© 2001 IEEE
PDF ArticleMore Like This
I.A. Sokolov and M.A. Bryushinin
253 Photorefractive Effects, Materials, and Devices (PR) 2001
S.V. Frolov
QThC3 Quantum Electronics and Laser Science Conference (CLEO:FS) 2001
Morio Wada, Shojiro Araki, Takahiro Kudou, and Toshitsugu Ueda
TuH3_2 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2001