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  • The 4th Pacific Rim Conference on Lasers and Electro-Optics
  • Technical Digest Series (Optica Publishing Group, 2001),
  • paper TuH4_3

Proposal of the novel strain evaluation method for nitride semiconductors by photocurrent spectroscopy

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Abstract

Novel strain evaluation method is proposed, which is based on the strain dependence of the excitonic transition energy. Comparing the excitonic transition energies measured by the photocurrent spectroscopy with the calculated energies c-axis strain in undoped GaN grown on SiC substrate was estimated to be -0.03%.

© 2001 IEEE

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