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Conferences > CLEOPR > 2001 > TuJ1 > TuJ1_4
  • The 4th Pacific Rim Conference on Lasers and Electro-Optics
  • Technical Digest Series (Optica Publishing Group, 2001),
  • paper TuJ1_4

Striking change of carrier lifetime in biased InGaN quantum wells: effect of tunneling and piezoelectric field

Y. D. Jho, E. S. Oh, D. S. Kim, and J. S. Yliang

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Abstract

We have performed spectrum-resolved and various time-resolved measurements in InGaN/GaN LED structures, varying the external voltage from +2 to –30 V. The lifetime shows a drastic decrease from 4 ns to 2 ps.

© 2001 IEEE

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