Abstract

Theoretical analysis of CdF₂-CaF₂ heterostructure intersubband transition lasers on Si substrates was carried out and their threshold current density was estimated. We found that these lasers make 1.35µm operation feasible due to their large conduction band discontinuity at the CdF₂-CaF₂ heterointerfaces and the large optical confinement factor they exhibit when Si optical confinement layers are used. With active quantum wells of 10 periods their threshold current density is 350 A/cm² even at room temperature.

© 2001 IEEE