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Conferences > CLEOPR > 2007 > WA1 > WA1_6
  • Conference on Lasers and Electro-Optics/Pacific Rim 2007
  • (Optica Publishing Group, 2007),
  • paper WA1_6

Investigation of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Photoelectrochemical Oxidation Method

Li-Hsien Huang, Shu-Hao Yen, Ching-Ting Lee, Haipeng Tang, Jennifer Bardwell, and James B. Webb

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Abstract

A photoelectrochemical (PEC) oxidation method was used to directly grow oxide films on AlGaN surface as gate insulator for AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The threshold voltage of MOS-HEMT devices is -5V The gate leakage current is 50pA and 20pA at forward gate bias of Vgs=10V and reverse gate bias of Vgs= −10V, respectively. Maximum value of gm is 50ms/mm of Vgs biased at −2.09 V.

© 2007 IEEE

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