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  • Conference on Lasers and Electro-Optics/Pacific Rim 2007
  • (Optica Publishing Group, 2007),
  • paper WP_036

1.3 μm Band InGaAs MQWs with InGaP Metamorphic Graded Buffer Layer on GaAs Substrate

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Abstract

We have realized 1.3 µm-band highly strained InGaAs multiple quantum wells on a metamorphic InGaP graded buffer layer on a GaAs substrate grown by metal-organic vapor-phase epitaxy. We confirmed that the InGaP metamorphic buffer is more effective in improving the crystal quality than InGaAs buffer by performing photoluminescence and transmission electron microscope measurements.

© 2007 IEEE

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