The influence of ambient temperature on femtosecond laser ablation of semiconductor and metal

J. S. Yahng; J. R. Nam; T. O. Yoon; S. C. Jeoung

Conference on Lasers and Electro-Optics/Pacific Rim 2007
(Optica Publishing Group, 2007),
paper WP_054

The influence of ambient temperature on femtosecond laser ablation of semiconductor and metal

J. S. Yahng, J. R. Nam, T. O. Yoon, and S. C. Jeoung

Conference on Lasers and Electro-Optics/Pacific Rim 2007

Seoul Republic of Korea
ISBN: 1-4244-1174-2

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Poster Session I (WP)

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J. S. Yahng, J. R. Nam, T. O. Yoon, and S. C. Jeoung, "The influence of ambient temperature on femtosecond laser ablation of semiconductor and metal," in Conference on Lasers and Electro-Optics/Pacific Rim 2007, (Optica Publishing Group, 2007), paper WP_054.

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Abstract

Ultrafast laser ablation of silicon and metal was investigated as a function of temperature. The ablation efficiency is slightly enhanced with an apparent decrease in ablation threshold and surface roughness at a high substrate temperature.

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