Abstract
Room temperature, continuous-wave lasing in a photonic crystal nanocavity bonded onto a silicon substrate was demonstrated by utilizing InAs quantum dots gain at 1.3 μm A threshold absorbed power down to 2 μW was achieved.
© 2009 IEEE
PDF ArticleMore Like This
Masahiro Nomura, Satoshi Iwamoto, and Yasuhiko Arakawa
IMF3 Integrated Photonics and Nanophotonics Research and Applications (IPR) 2009
Yuan-Hsuan Jhang, Katsuaki Tanabe, Satoshi Iwamoto, and Yasuhiko Arakawa
SW3F.4 CLEO: Science and Innovations (CLEO:S&I) 2015
Guohong Xiang, Mingchu Tang, Taojie Zhou, Boyuan Xiang, Suikong Hark, Mickael Martin, Thierry Baron, Ying Lu, Victoria Cao, Siming Chen, Huiyun Liu, and Zhaoyu Zhang
T1F.4 Asia Communications and Photonics Conference (ACP) 2019