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  • Conference on Lasers and Electro-Optics/Pacific Rim 2009
  • (Optica Publishing Group, 2009),
  • paper MH2_4

Photonic Crystal Nanocavity Lasers with InAs Quantum Dots Bonded onto Silicon Substrates

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Abstract

Room temperature, continuous-wave lasing in a photonic crystal nanocavity bonded onto a silicon substrate was demonstrated by utilizing InAs quantum dots gain at 1.3 μm A threshold absorbed power down to 2 μW was achieved.

© 2009 IEEE

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