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Conferences > CLEOPR > 2009 > TUP > TUP4_20
  • Conference on Lasers and Electro-Optics/Pacific Rim 2009
  • (Optica Publishing Group, 2009),
  • paper TUP4_20

High-power GaN Diode Pumped Q-switch Pr3+-doped LiYF4 Laser

Junichiro Kojou, Yojiro Watanbe, and Fumihiko Kannari

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Abstract

A Q-switch Pr:LiYF4 laser at 639 nm pumped by a high-power GaN laser diode is demonstrated. The highest laser peak power of 4.8 W with a pulsewidth of 270 ns is obtained at 7.7 kHz.

© 2009 IEEE

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