High Orientation InN Growth on Oxide Buffer Layer by Metal-organic Molecular Beam Epitaxy

Shou-Yi Kuo; Shou-Yi Kuo; Fang-I Lai; Wei-Chun Chen; Woei-Tyng Lin; Chien-Nan Hsiao; Yu-Kai Liu; Ji-Lin Shen

Conference on Lasers and Electro-Optics/Pacific Rim 2009
(Optica Publishing Group, 2009),
paper TUP6_12

High Orientation InN Growth on Oxide Buffer Layer by Metal-organic Molecular Beam Epitaxy

Shou-Yi Kuo, Fang-I Lai, Wei-Chun Chen, Woei-Tyng Lin, Chien-Nan Hsiao, Yu-Kai Liu, and Ji-Lin Shen

Conference on Lasers and Electro-Optics/Pacific Rim 2009

Shanghai China
30 August–3 September 2009
ISBN: 978-1-4244-3830-3

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S. Kuo, F. Lai, W. Chen, W. Lin, C. Hsiao, Y. Liu, and J. Shen, "High Orientation InN Growth on Oxide Buffer Layer by Metal-organic Molecular Beam Epitaxy," in Conference on Lasers and Electro-Optics/Pacific Rim 2009, (Optica Publishing Group, 2009), paper TUP6_12.

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Abstract

High orientation InN films on oxide buffer layer were grown by MOMBE. Near-infrared emission peak, centered at 0.75 eV, was observed from PL measurement. Experimental results reveal that oxide buffer layer can be used in lattice-mismatched III-V heteroepitaxial systems.

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