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Conferences > CLEOPR > 2009 > ThA4 > ThA4_3
  • Conference on Lasers and Electro-Optics/Pacific Rim 2009
  • (Optica Publishing Group, 2009),
  • paper ThA4_3

Design and Fabrication of 980nm Three-Active Regions High Power Semiconductor Lasers

Zhiqun Wang, Lei Zhang, Bifeng Cui, and Guangdi Shen

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Abstract

Based on the principle of tunnel regeneration, three-active regions high power semiconductor lasers were designed and fabricated. Powered by pulse currents limited at 30A, the emitting wavelength of 998nm, the optical power output of 40.48W, Ith, of 7.95A and the differential efficiency of 1.62W/A were obtained.

© 2009 IEEE

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