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Conferences > CLEOPR > 2009 > WD1 > WD1_4
  • Conference on Lasers and Electro-Optics/Pacific Rim 2009
  • (Optica Publishing Group, 2009),
  • paper WD1_4

Tunable High-Power Narrow-Linewidth Semiconductor Laser Based on an External-Cavity Tapered Amplifier at 670 nm

Mingjun Chi, Ole B. Jensen, G. Erbert, B. Sumpf, and P. M. Petersen

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Abstract

A narrow-linewidth laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. 800 mW output power is obtained, and the laser system is tunable from 655 to 679 nm.

© 2009 IEEE

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