Abstract
In this study, we investigated the kinetics and etched morphology on sapphire substrate by mixing acid solutions. We developed different etching conditions to produce various etching morphology patterns on sapphire surface. Then, GaN micro-rod embedded with quantum wells (QWs) were grown on the patterned sapphire surface. The cathode luminescence (CL) images of these QW embedded micro-rods have shown great crystal quality.
© 2009 IEEE
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