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Conferences > CLEOPR > 2011 > LED > C680
  • Proceedings of the International Quantum Electronics Conference and Conference on Lasers and Electro-Optics Pacific Rim 2011
  • (Optica Publishing Group, 2011),
  • paper C680

Efficiency Droop Improvement in InGaN/GaN Light-emitting Diodes by Graded-composition Electron Blocking Layer

C. H. Wang, W. T. Chang, S. P. Chang, J. C. Li, H. C. Kuo, T. C. Lu, and S. C. Wang

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Abstract

InGaN/GaN LED with a graded-composition electron blocking layer has superior hole injection and electron confinement by simulation. Experiment results demonstrated that such GEBL exhibited better electrical characteristics, and higher output power at high current density.

© 2011 AOS

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