Abstract
We demonstrate a promising technique to control the position and density of nitrogen-vacancy (NV) centers in diamond thin film grown on a diamond substrate using nitrogen-doped isotopically-purified chemical vapor deposition (CVD). We succeed in control of the lateral position and density of NV centers doped in diamond thin film utilizing a micropatterned diamond substrate for nitrogen-doped isotopically-purified CVD diamond growth.
© 2013 IEICE
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