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  • 2013 Conference on Lasers and Electro-Optics Pacific Rim
  • (Optica Publishing Group, 2013),
  • paper WK1_4

RF Response of PIN Photodiode with Avalanche Multiplication Using Quantum Dots

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Abstract

We fabricate a new PIN photodiode using InAs/InAlGaAs quantum dot absorption layer with an avalanche multiplication, low breakdown temperature coefficient, and high frequency response. Multiplication factors of M = 1 to M = 12 and the RF response over 10GHz are reported.

© 2013 IEICE

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