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Conferences > CLEOPR > 2015 > 25J3 > 25J3_3
  • 2015 Conference on Lasers and Electro-Optics Pacific Rim
  • (Optica Publishing Group, 2015),
  • paper 25J3_3

Characteristics of film InP layer and Si substrate bonded interface bonded by wafer direct bonding

Keiichi Matsumoto, Yoshinori Kanaya, Junya Kishikawa, and Kazuhiko Shimomura

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Abstract

We demonstrated bonding of thin film InP and Si using wafer direct bonding technique and compared with bulk InP/Si bonded sample in terms of bonding strength and defect formation. Electrical conduction through the interface was also investigated.

© 2015 IEEE

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