Drastic enhancement of Eu emission from red light-emitting Eu-doped GaN in a microcavity

Yasufumi Fujiwara; Tomohiro Inaba; Takanori Kojima; Atsushi Koizumi

2015 Conference on Lasers and Electro-Optics Pacific Rim
(Optica Publishing Group, 2015),
paper 26H1_2

Drastic enhancement of Eu emission from red light-emitting Eu-doped GaN in a microcavity

Yasufumi Fujiwara, Tomohiro Inaba, Takanori Kojima, and Atsushi Koizumi

Conference on Lasers and Electro-Optics/Pacific Rim 2015

Busan Republic of Korea
24–28 August 2015
ISBN: 978-1-4673-7110-0

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Growth and Fabrications (26H1)

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Y. Fujiwara, T. Inaba, T. Kojima, and A. Koizumi, "Drastic enhancement of Eu emission from red light-emitting Eu-doped GaN in a microcavity," in 2015 Conference on Lasers and Electro-Optics Pacific Rim, (Optica Publishing Group, 2015), paper 26H1_2.

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Abstract

Eu-doped GaN (GaN:Eu) has been identified as a promising red emitter. A GaN:Eu layer was confined in a microcavity consisting of a Ag mirror and an AlGaN/GaN distributed Bragg reflector (DBR), resulting in drastic enhancement of Eu emission intensity.

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