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  • 2015 Conference on Lasers and Electro-Optics Pacific Rim
  • (Optica Publishing Group, 2015),
  • paper 26P_108

Carrier Overflow in InGaN/GaN Light-Emitting Diodes Investigated by Temperature-Dependent Short-Circuit Current Characteristics

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Abstract

The temperature dependence of the short-circuit current in the InGaN/GaN multiple-quantum-well light-emitting diode is investigated. From the experiments, we demonstrate that the carrier overflow to the p-GaN clad occurs more severely with decreasing temperature, resembling the behavior of the efficiency droop and the open-circuit voltage.

© 2015 IEEE

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