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  • 2015 Conference on Lasers and Electro-Optics Pacific Rim
  • (Optica Publishing Group, 2015),
  • paper 26P_109

Quantitative Analysis of Carrier Escape Efficiency in GaN-Based Light-Emitting Diodes

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Abstract

Internal quantum efficiency, non-radiative efficiency in the active region, and efficiency of carrier escape out of the active region in InGaN-based light-emitting diode are deduced by comparison between open- and short-circuit photoluminescence experiments.

© 2015 IEEE

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