Abstract
Photoluminescence emission of InP/GaInAs/InP coremultishell nanowires was obtained at room temperature. InP nanowires were grown on InP(111)B substrate by selfcatalytic VLS mode of MOVPE using an indium catalyst. InP-core and GaInAs-shell structure was grown by changing the growth temperature. We have successfully obtained the PL emission from these core-shell nanowires at room temperature, and measured the PL spectrum dependent on the thickness of GaInAs-shell.
© 2015 IEEE
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