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Conferences > CLEOPR > 2015 > 28C2 > 28C2_1
  • 2015 Conference on Lasers and Electro-Optics Pacific Rim
  • (Optica Publishing Group, 2015),
  • paper 28C2_1

Growth of Semipolar GaN Substrates by Hydride Vapor Phase Epitaxy on Patterned Sapphire Substrate

K. Tadatomo, T. Inagaki, N. Okada, K. Yamane, Y. Hashimoto, and H. Furuya

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Abstract

The surface roughening and crack generation during the HVPE growth on the MOVPE-grown semipolar GaN template were successfully suppressed by using SiO2 striped masks perpendicular to the a-axis on the semipolar GaN template. The growth toward the –c-direction during the MOVPE growth was also successfully suppressed by using the growth temperature control; this resulted in a large reduction in the formation of stacking faults in semipolar GaN.

© 2015 IEEE

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