Abstract
We discovered that Si-doped AlGaN with low AlN molar fraction have been used to realize an external low-resistivity n-layer at room temperature. This Si-doped n-Al0.05Ga0.95N underlying layer is extremely useful for the realization of high-performance nitride-based light emitting diodes. We also confirmed a reduction in the differential resistance of a violet light-emitting diode by using this n-AlGaN.
© 2015 IEEE
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