Layered Semiconductor GeS: A Metamaterial With Extremely Low Refractive Index

A. Ozturk; R. Suleymanli

2015 Conference on Lasers and Electro-Optics Pacific Rim
(Optica Publishing Group, 2015),
paper 28E2_5

Layered Semiconductor GeS: A Metamaterial With Extremely Low Refractive Index

A. Ozturk and R. Suleymanli

Conference on Lasers and Electro-Optics/Pacific Rim 2015

Busan Republic of Korea
24–28 August 2015
ISBN: 978-1-4673-7110-0

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Plasmonics and Metamaterials IX (28E)

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A. Ozturk and R. Suleymanli, "Layered Semiconductor GeS: A Metamaterial With Extremely Low Refractive Index," in 2015 Conference on Lasers and Electro-Optics Pacific Rim, (Optica Publishing Group, 2015), paper 28E2_5.

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Abstract

Reflection and transmission optical spectra of layered semiconductor GeS are investigated. It is shown, that this semiconductor can be considered as natural metamaterial with extremely low, n=0.14, refractive index in wide spectral region, λ=0.8–1.0 μm.

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