Abstract
Polarization-dependent periodic nanostructures inside GaP and β–Ga2O3 crystals have been induced by the IR femtosecond double pulse irradiation. These nanostructures in semiconductor could be influenced by the transition type and the bandgap energy. Apart from the basic understanding of the formation mechanisms, such nanostructures in semiconductors will open the door to the innovative application of the self- contained thermoelectric devices.
© 2017 Optical Society of America
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