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Conferences > CLEOPR > 2017 > 2DMCPD > s1306
  • 2017 Conference on Lasers and Electro-Optics Pacific Rim
  • (Optica Publishing Group, 2017),
  • paper s1306

WSe2-In2O3 nanowire infrared phototransistor

Nan Guo, Junku Liu, Yi Jia, Sijia Wang, Lei Wang, Peng Qin, and Lin Xiao

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Abstract

We report on a hybrid phototransistor that consists of In2O3 nanowire covered with multilayer WSe2. The absorption of infrared light in multilayer WSe2 forms the accumulation of photogenerated carriers at the interface between WSe2 and In2O3 to enhance the conductance of nanowire. A responsivity of ~104 A W−1 and an on/off ratio of ~106 are obtained with 940 nm light irradiation at room temperature. The spectral response can be observed for photon energy near the bandgap of WSe2.

© 2017 Optical Society of America

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