Abstract
We present mid-IR waveguides developed in Ge-on-SOI and SOI. The minimum loss achieved for Ge-on-SOI strip waveguides is ∼8 dB/cm and for SOI waveguides is ∼1.4 dB/cm for TE polarized light at 3.7 µm. These waveguides demonstrate the feasibility of employing Ge-on-SOI for high power integrated sensing and SOI to achieve low-loss interconnects.
© 2017 Optical Society of America
PDF ArticleMore Like This
Usman Younis, Sudheer K. Vanga, Andrew A. Bettiol, and Kah-Wee Ang
JTh2A.96 CLEO: Applications and Technology (CLEO_AT) 2016
Vasileios Mourgelas, James S. Wilkinson, and Ganapathy Senthil Murugan
OW2B.3 Optical Fabrication and Testing (OFT) 2021
BOWEI DONG, XIANSHU LUO, HONG WANG, CHENGKUO LEE, and GUO-QIANG LO
s1865 Conference on Lasers and Electro-Optics/Pacific Rim (CLEOPR) 2017