Abstract
Numerical study on the effect of an external stressor material, silicon nitride (SiN), on the tensile strain enhancement of Germanium waveguide-on-insulator (Ge WG-OI) was performed. The enhanced tensile strain shrinks Gebandgap which leads to extension of optical absorption edge towards longer wavelength. It was found that 1GPa tensile SiN (400nm) would introduce ~0.65% uniaxial tensile strain (along WG width direction) in Ge WG with 0.5μm width and extend the Г-valley-light-hole absorption edge to ~1658nm. Tensile strain-enhanced Ge WG-OI was also experimentally demonstrated. These studies pave the way for an on-chip tensile-strained Gephotodetector with improved performance comparable to InGaAs-based detectors. This technique is completely CMOS-compatible and could also be applied to other Ge-based on-chip active device design such as lasers.
© 2017 Optical Society of America
PDF ArticleMore Like This
Yiding Lin, Danhao Ma, Rui-Tao Wen, Kwang Hong Lee, Xin Guo, Jin Zhou, Hong Wang, Chuan Seng Tan, and Jurgen Michel
STh4O.2 CLEO: Science and Innovations (CLEO:S&I) 2019
Jiaxin Ke, Zhiqiang (Leo) Li, Simon Li, and Guangrui (Maggie) Xia
IW1A.5 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2016
Donguk Nam, Arunanshu M. Roy, Kevin C. Y. Huang, Mark L. Brongersma, and Krishna C. Saraswat
JTuI85 CLEO: Applications and Technology (CLEO:A&T) 2011