Abstract
We fabricated 1550 nm band, p-doped, ridge-structured, 30-layer-stacked QD-LDs with a delta-doping method employing the strain compensation technique grown on an InP(311)B substrate. And, we demonstrated the fabricated ridge-structured QD-LD had extremely stable temperature characteristics, where a T0 of more than 1900 K was obtained.
© 2017 Optical Society of America
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