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Conferences > CLEOPR > 2018 > Th1H > Th1H.2

High-Q Nanocavity-Based Raman Laser Fabricated on a (100) SOI Substrate with a 45-Degree-Rotated Top Silicon Layer

Yukiko Yamauchi, Makoto Okano, Susumu Noda, and Yasushi Takahashi

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Abstract

We report a low-threshold Raman laser based on nanocavities fabricated on an improved (100) SOI substrate with a 45-degree-rotated top silicon layer. We consider that this SOI substrate enables mass production of silicon Raman lasers.

© 2018 The Author(s)

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