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56 Gb/s Si/GeSi Optical Modulator

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Abstract

We present experimental measurements of an EAM modulator developed on an 800 nm SOI platform working at 1566 nm with dynamic ER of 5.2 dB at 56 Gb/s, EO bandwidth of 56 GHz and power consumption of 44 fJ/bit.

© 2018 The Author(s)

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