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Polarization Insensitive Silicon-Indium Tin Oxide Based Electro-Absorption Modulator

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Abstract

We propose a highly-efficient, low-loss, and polarization insensitive silicon-indium tin oxide electro-absorption modulator. High modulation efficiency of ~3.18 dB/μm and low insertion loss of <0.3 dB are achieved in a length of 8 μm.

© 2018 The Author(s)

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