Abstract
We propose a highly-efficient, low-loss, and polarization insensitive silicon-indium tin oxide electro-absorption modulator. High modulation efficiency of ~3.18 dB/μm and low insertion loss of <0.3 dB are achieved in a length of 8 μm.
© 2018 The Author(s)
PDF ArticleMore Like This
Yin Xu, Feng Li, Jinhui Yuan, Zhe Kang, Chao Mei, Xianting Zhang, and P. K. A. Wai
JW2A.4 CLEO: Applications and Technology (CLEO:A&T) 2018
Qian Gao, Erwen Li, and Alan X. Wang
STh3H.3 CLEO: Science and Innovations (CLEO:S&I) 2019
Tae Young Kim, Junho Yoon, Seon Young Lee, Wonyoung Kim, Young Chul Jun, and Chang Kwon Hwangbo
MD.6 Optical Interference Coatings (OIC) 2016