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Conferences > CLEOPR > 2018 > W3A > W3A.117

Successful fabrication of GaInAsP ridge waveguide laser diode using hydrophilic bonded InP/Si substrate

Hiromu Yada, Naoki Kamada, Yuya Onuki, Xu Han, Gandhi Kallarasan Periyanayagam, Kazuki Uchida, Hirokazu Sugiyama, Masaki Aikawa, Natsuki Hayasaka, and Kazuhiko Shimomura

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Abstract

We have successfully fabricated 1.5 µm GaInAsP ridge waveguide laser diode on InP/Si substrate and obtained lasing emission. We have measured I-L-V characteristics and compared threshold current between InP/Si and InP substrate at several temperatures.

© 2018 The Author(s)

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