Abstract

Spin defects in wide band gap semiconductors are a leading contender in various areas of quantum technology. Most notably they have been established as a novel tool for nanoscale sensing and as major hardware for long distance quantum entanglement, necessary for quantum repeater structures [¹,²]. I will present the use of spin defects in Silicon Carbide (SiC) for quantum photonics and specifically for spin-photon interfaces [³]. Specifically, I will address the spin properties of the material and the interplay between photon emission and spin memory times. It turns out, that the silicon vacancy in SiC is an excellent compromise between photonic and spin quantum memory properties [⁴]. Even when incorporated into microscale photonic waveguides the optical transitions retain high quality such that long spin coherence times and almost transform-limited photon emission can be observed simultaneously.

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