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Heterostructure Vertical p-i-n GeSn Light-Emitting Diodes on Silicon-on-Insulator for 2µm Wavelength Band

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Abstract

We report on GeSn vertical p-i-n heterostructure light-emitting diode grown on silicon-on-insulator platform. Room-temperature electroluminescence spectra were demonstrated. These results pave the pathway for efficient on-chip light sources for integrated photonics in 2 µm wavelength band.

© 2022 IEEE

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