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Development of Reliable mW level powers in Pseudomorphic Ultraviolet Light Emitting Diodes on Bulk Aluminum Nitride Substrates

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Abstract

The use of low defect density bulk AlN substrates has led to reliable pseudomorphic ultraviolet light emitting diodes capable of mW level power outputs from packaged devices emitting from 250-275 nm.

© 2011 Optical Society of America

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